The SNC has an extensive range of etching tools and processes used for etching a range of semiconductors, dielectrics and metals. High resolution pattern transfer of features from micron to nano scale can be done at the SNC via dry or by wet etching solutions.
RIE - Reactive Ion Etching
The etch mechanism of RIE is achieved by using a reactive gas plasma generated by strong RF source to chemically ion etch material. Depending on the process recipe, the etch profile can achieve high anisotropy.
- There are two Plasmalab 80 Plus systems in the SNC. They are equipped with fluorine-based chemistry, argon and oxygen gases. Ideal for silicon, germanium, silica, silicon nitride, polymer, resist residue cleaning.
ICP - Inductively Coupled Plasma Etching
The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. In addition, the systems can operate in ICP or RIE mode separately. The two ICP systems are:
- Plasmalab System 100 - Fluorine-based chemistry etching. Ideal for deep oxide etching, BPSG, TEOS, rare earth oxide, silicon, polymer and diamond based material.
- Plasmalab System 100 - Chlorine/bromine-based chemistry etching. Ideal for metal etching, poly-silicon gate, III-V and III-N based semiconductor materials.
R-IBE - Reactive Ion Beam Etching
Works on the principle of an energised ion beam for a primarily physical etching mechanism. This can achieve very high aspect ratio profiles, high etch rates and uniformity over a large sample. The system can handle up to 200 mm (8”) diameter wafers and samples can be tilted to perform angular etches.
- Ionfab 300 plus - Configured for physical etching using argon, this process etches most materials.
DSE - Deep Silicon Etcher
This system utilises the Advanced Silicon Etch (ASE) Technology, based on the Bosch process, to achieve very deep vertical silicon etch profile and smooth sidewall. This etching process is particularly suitable for silicon-based MEMS and NEMS devices where anisotropic profiles are essential.
- The SNC has a Plasmatherm VERSALINE system which is configured for fluorine-based chemistry to etch silicon only. It is used to achieve etches from shallow depths to very deep depths and is used to perform through-silicon etches as well at a very fast etch rate, while maintaining vertical sidewalls, i.e. 90°±2°.