LPCVD is a technique for depositing a variety of materials that are commonly used in the semiconductor industry. The reactants are gases and energy is provided by heating the substrate to a high temperature (typically 500-700C). Since the reactants are gases, deposition can be performed in principle on any substrate.
Tempress LPCVD Poly-Si Furnace
This furnace can be used to deposit undoped amorphous and polycrystalline silicon. A deposition temperature of around 625°C is typically used to deposit polycrystalline silicon and 540°C to deposit amorphous silicon. The wafer throughput is very high and the furnace can accept wafers up to 200 mm (8") in diameter.
Tempress LPCVD Nitride Furnace
This furnace can be used to deposit stoichiometris silicon nitride and silicon rich (lower stress) nitride using a deposition temperatures of around 740°C and 800°C. If deposition at lower temperatures is required, plasma enhanced chemical vapour deposition can be used. The wafer throughput is very high and the furnace can accept wafers up to 200 mm in diameter.
