• Overview
• Nanofabrication
  • E-beam Lithography
  • FIB
  • ALD
  • Epitaxy
  • Nanotubes and Nanowires
• Cleanroom Equipment
  • Lithography
  • Etching Capabilities
  • Optical Lithography
  • Align and Bond
  • PECVD
  • LPCVD
  • Anneal
  • Growth
  • Dry Etch
  • Wet Etch
  • Dice Bond Packaging

LPCVD

LPCVD is a technique for depositing a variety of materials that are commonly used in the semiconductor industry. The reactants are gases and energy is provided by heating the substrate to a high temperature (typically 500-700C). Since the reactants are gases, deposition can be performed in principle on any substrate.

Tempress LPCVD Poly Furnace

This furnace can be used to deposit undoped amorphous and polycrystalline silicon. A deposition temperature of around 625C is typically used to deposit polycrystalline silicon and 540C to deposit amorphous silicon. The wafer throughput is very high and the furnace can accept wafers up to 200mm in diameter.

Tempress LPCVD Nitride Furnace

This furnace can be used to deposit silicon nitride using a deposition temperature of around 740C. If deposition at lower temperatures is required, plasma enhanced chemical vapour deposition can be used. The wafer throughput is very high and the furnace can accept wafers up to 200mm in diameter.